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FDS6299S
July 2005
FDS6299S
30V N-Channel PowerTrench(R) SyncFETTM
General Description
The FDS6299S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6299S includes a patented combination of a MOSFET monolithically integrated with a Schottky diode. Applications * Synchronous Rectifier for DC/DC Converters - * Notebook Vcore low side switch * Point of load low side switch
Features
* 21 A, 30 V. RDS(ON) = 3.9 m @ VGS = 10 V RDS(ON) = 5.1 m @ VGS = 4.5 V * * * * * Includes SyncFET Schottky body diode High performance trench technology for extremely low RDS(ON) and fast switching High power and current handling capability 100% RG (Gate Resistance) tested Termination is Lead-free and RoHS Compliant
D D
D
D
5 6 4 3 2 1
SO-8
S
S
S
G
7 8
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
TA=25oC unless otherwise noted
Parameter
Ratings
30 20
(Note 1a)
Units
V V A W
21 105 2.5 1.2 1 -55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
C
Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
50 25
C/W
Package Marking and Ordering Information
Device Marking FDS6299S Device FDS6299S Reel Size 13'' Tape width 12mm Quantity 2500 units
(c)2005 Fairchild Semiconductor Corporation
FDS6299S Rev C (W)
FDS6299S
Electrical Characteristics
Symbol Off Characteristics
BVDSS BVDSS TJ IDSS IGSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage
TA = 25C unless otherwise noted
Parameter
Test Conditions
VGS = 0 V, ID = 1 mA
Min Typ Max Units
30 32 500 100 V mV/C A nA
ID = 1 mA, Referenced to 25C VDS = 24 V, VGS = 20 V, VGS = 0 V VDS = 0 V
On Characteristics
VGS(th) VGS(th) TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 1 mA 1 1.7 -4 3.3 4.1 4.5 94 3.9 5.1 5.6 3 V mV/C m ID = 1 mA, Referenced to 25C VGS = 10 V, ID = 21 A ID = 19 A VGS = 4.5 V, VGS=10 V, ID =21 A, TJ=125C VDS = 10 V, ID = 21 A
gFS
S
Dynamic Characteristics
Ciss Coss Crss RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
(Note 2)
VDS = 15 V, f = 1.0 MHz VGS = 15 mV,
V GS = 0 V,
3880 1030 310
pF pF pF 3.1
f = 1.0 MHz
0.4
1.8
Switching Characteristics
td(on) tr td(off) tf Qg(TOT) Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time
VDD = 15 V, VGS = 10 V,
ID = 1 A, RGEN = 6
12 12 60 35
22 22 96 56 81 43
ns ns ns ns nC nC nC nC
Total Gate Charge at VGS=10V Total Gate Charge at VGS=5V Gate-Source Charge Gate-Drain Charge
VDS = 15 V,
ID = 21 A
58 31 11 8
Drain-Source Diode Characteristics and Maximum Ratings
VSD trr IRM Qrr Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Current Diode Reverse Recovery Charge VGS = 0 V, IS = 3.5 A
(Note 2)
420 32 2.1 34
700
mV ns A nC
IF = 21 A, dIF/dt = 300 A/s
(Note 3)
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
a) 50/W when mounted on a 1 in2 pad of 2 oz copper
b) 105/W when mounted on a .04 in2 pad of 2 oz copper
c) 125/W when mounted on a minimum pad.
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%. 3. See "SyncFET Schottky body diode characteristics" below.
FDS6299S Rev C (W)
FDS6299S
Typical Characteristics
105 VGS = 10V 90 ID, DRAIN CURRENT (A) 4.5V 75 60 45 30 15 2.5V 0 0 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) 2 3.0V 4.0V 3.5V
2.4 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
VGS = 3.0V
2.2 2 1.8 1.6 1.4 1.2 1 0.8 0 15 30 45 60 75 ID, DRAIN CURRENT (A) 90 105
3.5V 4.0V 4.5V 5.0V 6.0V 10V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.012
1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
RDS(ON), ON-RESISTANCE (OHM)
ID = 21A VGS =10V
ID = 10.5A 0.01
1.4
1.2
0.008 TA = 125oC 0.006
1
0.8
0.004 TA = 25 C 0.002
o
0.6 -50
-25
0 25 50 75 o TJ, JUNCTION TEMPERATURE ( C)
100
125
2
4 6 8 VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 3. On-Resistance Variation with Temperature.
105
VDS = 5V
IS, REVERSE DRAIN CURRENT (A)
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100
VGS = 0V
10
90 ID, DRAIN CURRENT (A) 75 60 45
TA = 125 C
o
1
TA = 125 C
o
25oC
0.1
-55 C
o
30 15
25 C
o
0.01
-55oC
0 1 1.5 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V) 4
0.001 0 0.2 0.4 0.6 VSD, BODY DIODE FORWARD VOLTAGE (V) 0.8
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDS6299S Rev C (W)
FDS6299S
Typical Characteristics (continued)
10 VGS, GATE-SOURCE VOLTAGE (V)
ID = 21A
4800 4000 CAPACITANCE (pF)
VDS = 10V 20V
f = 1MHz VGS = 0 V
8
Ciss
3200 2400
Coss
6
15V
4
1600 800 0
2
Crss
0 0 10 20 30 40 Qg, GATE CHARGE (nC) 50 60
0
5
10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 7. Gate Charge Characteristics.
1000
P(pk), PEAK TRANSIENT POWER (W) 50
Figure 8. Capacitance Characteristics.
ID, DRAIN CURRENT (A)
100
RDS(ON) LIMIT 100us 1ms 10ms 100ms 1s 10s DC VGS = 10V SINGLE PULSE o RJA = 125 C/W TA = 25 C
o
40
SINGLE PULSE RJA = 125C/W TA = 25C
10
30
1
20
0.1
10
0.01 0.01
0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V)
100
0 0.001
0.01
0.1
1 t1, TIME (sec)
10
100
1000
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
D = 0.5 0.2
RJC(t) = r(t) * RJC RJC = 125 C/W
0.1
0.1 0.05 0.02
P(pk
0.01
0.01
t1 t2 TJ - TC = P * RJC(t) Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001 0.0001
0.001
0.01
0.1
t1, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design.
FDS6299S Rev C (W)
FDS6299S
Typical Characteristics (continued)
SyncFET Schottky Body Diode Characteristics
Fairchild's SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 12 shows the reverse recovery characteristic of the FDS6299S. Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device.
0.1 IDSS, REVERSE LEAKAGE CURRENT (A)
TA = 125oC
0.01
0.001
TA = 100oC
CURRENT : 0.8A/div
0.0001
TA = 25oC
0.00001 0 5 10 15 20 VDS, REVERSE VOLTAGE (V) 25 30
Figure 13. SyncFET body diode reverse leakage versus drain-source voltage and temperature.
TIME : 12.5ns/div
Figure 12. FDS6299S SyncFET body diode reverse recovery characteristic.
FDS6299S Rev C (W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
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DISCLAIMER
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I16

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